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Surface Mount Integrated Circuit IC Chip IRF7413TRPBF F7413 N Channel Mosfet 30V 13A 2.5W

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Surface Mount Integrated Circuit IC Chip IRF7413TRPBF F7413 N Channel Mosfet 30V 13A 2.5W

Brand Name : IOR

Model Number : IRF7413TRPBF

Certification : ROHS

Place of Origin : CHINA

MOQ : 20pcs

Price : negotiate

Payment Terms : Western Union, T/T,Paypal

Supply Ability : Consultation

Delivery Time : 2-3 working days

Packaging Details : 2500PCS/Standard Package

FET Type : N-Channel

Power Dissipation (Max) : 2.5W

Operating Temperature : -55°C ~ 150°C

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IRF7413TRPBF F7413 N-Channel MOSFET 30V 13A 2.5W Surface Mount

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infra red, or wave soldering techniques. Power dissipation

of greater than 0.8W is possible in a typical PCB mount

application.

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) 11 mOhm @ 7.3A, 10V
Vgs(th) (Max) 3V @ 250µA
Gate Charge (Qg) (Max) 79nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) 1800pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C

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Wholesale Surface Mount Integrated Circuit IC Chip IRF7413TRPBF F7413 N Channel Mosfet 30V 13A 2.5W from china suppliers

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