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Shenzhen Koben Electronics Co., Ltd.
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Through Hole TO-247-3 Integrated Circuit IC Chip IRFPF50PBF NChannel MOSFET 900V 6.7A 190W

Shenzhen Koben Electronics Co., Ltd.
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Through Hole TO-247-3 Integrated Circuit IC Chip IRFPF50PBF NChannel MOSFET 900V 6.7A 190W

Brand Name : IOR

Model Number : IRFPF50PBF

Certification : ROHS

Place of Origin : CHINA

MOQ : 20pcs

Price : negotiate

Payment Terms : Western Union, T/T,Paypal

Supply Ability : Consultation

Delivery Time : 2-3 working days

Packaging Details : 50PCS/Standard Package

FET Type : N-Channel

Drain to Source Voltage (Vdss) : 900V

Vgs (Max) : ±20V

Operating Temperature : -55°C ~ 150°C

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IRFPF50PBF N-Channel MOSFET 900V 6.7A (Tc) 190W (Tc) Through Hole TO-247-3

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching • Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 150°C

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Wholesale Through Hole TO-247-3 Integrated Circuit IC Chip IRFPF50PBF NChannel MOSFET 900V 6.7A 190W from china suppliers

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